A thyristor is a multilayer p–n terminal electronic device used for bi-stable switching. Thus, the maximum converter switching frequency of the IGBT is intermediate between that of a bipolar power transistor and a power MOSFET.Ĩ POINTS TO REMEMBER: 1. The turn-on time is nearly the same as in the case of a power MOSFET, but the turn-off time is longer. They have switching speeds greater than those of bipolar power transistors. The IGBT is mostly used in high-speed switching devices. The cathode, i.e., the IGBT emitter is formed on the n source region. An inversion layer can be formed by applying proper gate voltage. The p-region contains two n regions and acts as a MOSFET source. Then there is a buffer layer of n region and a bipolar-base drift region. Constructional Features: The structure of an IGBT cell is shown in Fig The p region acts as a substrate which forms the anode region, i.e., the collector region of the IGBT. Both power MOSFET and IGBT are the continuously controllable voltage-controlled switch. The insulated-gate bipolar transistor is a recent model of a power-switching device that combines the advantages of a power BJT and a power MOSFET. It is similar to the symbol for an n–p–n bipolar-junction power transistor with the insulated-gate terminal replacing the base.ĥ INSULATED-GATE BIPOLAR TRANSISTOR (IGBT):Ħ INSULATED-GATE BIPOLAR TRANSISTOR (IGBT): The IGBT operates in two modes: (i) The blocking or non-conducting mode (ii) The ON or conducting mode. The principle behind the operation of an IGBT is similar to that of a power MOSFET. Presentation on theme: "IGBT."- Presentation transcript:Ģ rEVISION Diode Silicon-Controlled Rectifi er (SCR)ģ INSULATED-GATE BIPOLAR TRANSISTOR (IGBT)Ĥ Physical Operation: The IGBT operates in two modes:
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